Reversible control of magnetism in FeRh thin filmshttps://hdl.handle.net/21.15109/CONCORDA/83J6T0Merkel, Dániel G.Lengyel, AttilaNagy, Dénes LajosNémeth, AttilaHorváth, Zsolt E.Bogdán, CsillaGracheva, Maria A.Hegedűs, GergőSajti, SzilárdRadnóczi Z. GyörgySzilágyi EditARP2021-12-032024-03-25T20:12:17ZThe multilayer of approximate structure MgO(100)/[nFe51Rh49(63 Å)/57Fe51Rh49(46 Å)]10 deposited at 200 °C is primarily of paramagnetic A1 phase and is fully converted to the magnetic B2 phase by annealing at 300 °C for 60 min. Subsequent irradiation by 120 keV Ne+ ions turns the thin film completely to the paramagnetic A1 phase. Repeated annealing at 300 °C for 60 min results in 100% magnetic B2 phase, i.e. a process that appears to be reversible at least twice. The A1 → B2 transformation takes place without any plane-perpendicular diffusion while Ne+ irradiation results in significant interlayer mixing.PhysicsInformation storage, Materials for devices, Nanoscale devices, Nanoscale materialsfakeDoiMigrationDoneMerkel, D.G., Lengyel, A., Nagy, D.L. et al. Reversible control of magnetism in FeRh thin films. Sci Rep 10, 13923 (2020)., doi, 10.1038/s41598-020-70899-x, https://doi.org/10.1038/s41598-020-70899-x2021-12-03Kutnyánszky, Anikó2021-06-15CC0 1.0