21.15109/CONCORDA/83J6T0Merkel, Dániel G.Dániel G.Merkel230513967001) Wigner Research Centre for Physics, 2) Centre for Energy ResearchLengyel, AttilaAttilaLengyel57194725433Wigner Research Centre for PhysicsNagy, Dénes LajosDénes LajosNagy0000-0002-6790-9505Wigner Research Centre for PhysicsNémeth, AttilaAttilaNémeth55166273600Wigner Research Centre for PhysicsHorváth, Zsolt E.Zsolt E.Horváth7102083578Centre for Energy ResearchBogdán, CsillaCsillaBogdán36134338800Wigner Research Centre for PhysicsGracheva, Maria A.Maria A.Gracheva57195406589Institute of Chemistry, Eötvös Loránd UniversityHegedűs, GergőGergőHegedűs57210158650Wigner Research Centre for PhysicsSajti, SzilárdSzilárdSajti0000-0002-8748-8242Wigner Research Centre for PhysicsRadnóczi Z. György7006275456Centre for Energy ResearchSzilágyi Edit0000-0003-3210-0121Wigner Research Centre for PhysicsReversible control of magnetism in FeRh thin filmsARP2021PhysicsInformation storage, Materials for devices, Nanoscale devices, Nanoscale materialsfakeDoiMigrationDoneKutnyánszky, AnikóAnikóKutnyánszkyWigner Research Centre for Physics2021-06-152024-03-2510.1038/s41598-020-70899-x37492657709558144301443112545145333794236902737661543523311247032304669784758591831674407795231819183616452183784527120322211191515811140350475099448080480614806448083782500384882558472611137241129129936028487971114333246141138text/tab-separated-valuesapplication/pdftext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldapplication/pdftext/x-fixed-fieldtext/x-fixed-fieldapplication/pdftext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/plainimage/jpegtext/x-fixed-fieldtext/plain; charset=US-ASCIItext/plain; charset=US-ASCIIapplication/octet-streamtext/plain; charset=US-ASCIItext/plain; charset=US-ASCIItext/x-fixed-fieldtext/x-fixed-fieldimage/jpegimage/jpegimage/jpegimage/jpegtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldapplication/octet-streamapplication/octet-streamapplication/octet-streamapplication/octet-streamtext/plainimage/jpegimage/jpegapplication/pdftext/x-fixed-fieldtext/x-fixed-fieldtext/plainimage/jpegtext/plaintext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-field2.1CC0 1.0The multilayer of approximate structure MgO(100)/[nFe51Rh49(63 Å)/57Fe51Rh49(46 Å)]10 deposited at 200 °C is primarily of paramagnetic A1 phase and is fully converted to the magnetic B2 phase by annealing at 300 °C for 60 min. Subsequent irradiation by 120 keV Ne+ ions turns the thin film completely to the paramagnetic A1 phase. Repeated annealing at 300 °C for 60 min results in 100% magnetic B2 phase, i.e. a process that appears to be reversible at least twice. The A1 → B2 transformation takes place without any plane-perpendicular diffusion while Ne+ irradiation results in significant interlayer mixing.